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19-0771; Rev 0; 4/07
KIT ATION EVALU E AILABL AV
Dual Bidirectional Low-Level Translator in DFN
General Description Features
Bidirectional Level Translation Guaranteed Data Rate 8Mbps (+1.2V VL VCC +5.5V) 16Mbps (+1.8V VL VCC +3.3V) Extended ESD Protection on the I/O VCC Lines 15kV Human Body Model 15kV Air-Gap Discharge per IEC61000-4-2 8kV Contact Discharge per IEC61000-4-2 Enable/Shutdown Ultra-Low 1A Supply Current in Shutdown Mode 8-Pin DFN Package
MAX3397E
The MAX3397E 15kV ESD-protected bidirectional level translator provides level shifting for data transfer in a multivoltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. A logic-low signal present on the VL side of the device appears as a logic-low signal on the VCC side of the device, and vice versa. The MAX3397E utilizes a transmission-gate-based design to allow data translation in either direction (VL VCC) on any single data line. The MAX3397E accepts VL from +1.2V to +5.5V and VCC from +1.65V to +5.5V, making the device ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems. The MAX3397E features a shutdown mode that reduces supply current to less than 1A, thermal short-circuit protection, and 15kV ESD protection on the VCC side for greater protection in applications that route signals externally. The MAX3397E operates at a guaranteed data rate of 8Mbps over the entire specified operating voltage range. Within specific voltage domains, higher data rates are possible. See the Timing Characteristics table. The MAX3397E is available in an 8-pin DFN package and specified over the extended -40C to +85C operating temperature range.
Ordering Information
PART MAX3397EELA+ TEMP RANGE -40C to +85C PINPACKAGE 8 DFN (2mm x 2mm) TOP MARK ABU PKG CODE L822-1
Applications
Cell Phones, MP3 Players Telecommunications Equipment SPITM, MICROWIRETM, and I2C Level Translation Portable POS Systems, Smart Card Readers Low-Cost Serial Interfaces, GPS
+Denotes a lead-free package.
Pin Configuration
MAX3397E
VCC EN 6 3 VL
I/O VCC1
SPI is a trademark of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor Corp.
8
7
+
1 2 GND 4 I/O VL2
Typical Application Circuit appears at end of data sheet.
I/O VCC2
DFN (2mm x 2mm)
________________________________________________________________ Maxim Integrated Products
I/O VL1 5
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.
Dual Bidirectional Low-Level Translator in DFN MAX3397E
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND.) VCC, VL .....................................................................-0.3V to +6V I/O VCC_......................................................-0.3V to (VCC + 0.3V) I/O VL_ ..........................................................-0.3V to (VL + 0.3V) EN.............................................................................-0.3V to +6V Short-Circuit Duration I/O VL_, I/O VCC_ to GND .......Continuous Continuous Power Dissipation (TA = +70C) 8-Pin DFN (derate 4.8mW/C above +70C) ............ 381mW Operating Temperature Range ...........................-40C to +85C Storage Temperature Range .............................-65C to +150C Lead Temperature (soldering, 10s) .................................+300C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25C.) (Notes 1, 2)
PARAMETER POWER SUPPLIES VL Supply Range VCC Supply Range Supply Current from VCC Supply Current from VL VCC Shutdown-Mode Supply Current VL Shutdown-Mode Supply Current I/O VL_ and I/O VCC_ ShutdownMode Leakage Current EN Input Leakage Tri-State Threshold Low Tri-State Threshold High ESD PROTECTION I/O VCC LOGIC-LEVEL THRESHOLDS I/O VL_ Input-Voltage High I/O VL_ Input-Voltage Low I/O VCC_ Input-Voltage High I/O VCC_ Input-Voltage Low I/O VL_ Output-Voltage High I/O VL_ Output-Voltage Low VIHL VILL VIHC VILC VOHL VOLL I/O VL_ source current = 20A, I/O VCC_ > VCC - 0.4V I/O VL_ sink current = 1mA, I/O VCC_ < 0.15V 0.67 x VL 0.4 VCC 0.4 0.15 VL 0.2 0.15 V V V V V V Human Body Model (Note 4) 15 kV VTH_L VTH_H VL VCC IQVCC IQVL ISHUTDOWN-VCC ISHUTDOWN-VL ISHUTDOWN-LKG TA = +25C, EN = GND TA = +25C, EN = GND TA = +25C, EN = GND TA = +25C VCC falling (Note 3) VCC rising (Note 3) 1.2 1.65 130 1 0.03 0.03 0.02 0.02 5.5 5.50 300 10 1 1 1 1 1.5 1 V V A A A A A A V V SYMBOL CONDITIONS MIN TYP MAX UNITS
2
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Dual Bidirectional Low-Level Translator in DFN
ELECTRICAL CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25C.) (Notes 1, 2)
PARAMETER I/O VCC_ Output-Voltage High I/O VCC_ Output-Voltage Low EN Input-Voltage High EN Input-Voltage Low SYMBOL VOHC VOLC VIH-EN VIL-EN I/O VCC side I/O VL side VL = 1.2V, VCC = 1.65V VL = 1.2V, VCC = 1.65V VL = 5V, VCC = 5V VL = 1.2V, VCC = 1.65V VL = 5V, VCC = 5V 0.8 0.8 27 40 9 30 12 CONDITIONS I/O VCC_ source current = 20A, I/O VL _ > VL - 0.2V I/O VCC_ sink current = 1mA, I/O VL_ < 0.15V VL 0.2 0.15 MIN 0.67 x VCC 0.4 TYP MAX UNITS V V V V
MAX3397E
RISE/FALL-TIME ACCELERATOR STAGE Transition-Detect Threshold Accelerator Pulse Duration I/O VL_ Output-Accelerator Source Impedance I/O VCC_ Output-Accelerator Source Impedance V ns
TIMING CHARACTERISTICS
(VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1M, CLOAD = 15pF, driver output impedance 50, I/O test signal of Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25C.) (Notes 1, 2)
PARAMETER +1.2V VL VCC +5.5V I/O VCC_ Rise Time I/O VCC_ Fall Time I/O VL_ Rise Time I/O VL_ Fall Time tRVCC tFVCC tRVL tFVL tPD-VL-VCC Propagation Delay tPD-VCC-VL Channel-to-Channel Skew Maximum Data Rate tSKEW Driving I/O VCC_ Each translator equally loaded Push-pull driving Open-drain driving Push-pull driving (Figure 1a) Open-drain driving (Figure 1c) Push-pull driving (Figure 1a) Open-drain driving (Figure 1c) Push-pull driving (Figure 1b) Open-drain driving (Figure 1d) Push-pull driving (Figure 1b) Open-drain driving (Figure 1d) Driving I/O VL_ Push-pull driving (Figure 1a) Open-drain driving (Figure 1c) Push-pull driving (Figure 1b) Open-drain driving (Figure 1d) Push-pull driving Open-drain driving 8 500 7 170 6 6 8 180 3 3 5 170 4 190 25 400 37 37 30 400 30 30 30 800 30 1000 20 50 ns Mbps kbps ns ns ns ns ns SYMBOL CONDITIONS MIN TYP MAX UNITS
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3
Dual Bidirectional Low-Level Translator in DFN MAX3397E
TIMING CHARACTERISTICS (continued)
(VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1M, CLOAD = 15pF, driver output impedance 50, I/O test signal of Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25C.) (Notes 1, 2)
PARAMETER +1.8V VL VCC +3.3V I/O VCC_ Rise Time I/O VCC_ Fall Time I/O VL_ Rise Time I/O VL_ Fall Time Propagation Delay Channel-to-Channel Skew Maximum Data Rate tRVCC tFVCC tRVL tFVL tPD-VL-VCC tPD-VCC-VL tSKEW Figure 1a (Note 5) Figure 1a (Note 6) Figure 1b (Note 5) Figure 1b (Note 6) Driving I/O VL_ Driving I/O VCC_ Each translator equally loaded 16 15 15 15 15 15 15 10 ns ns ns ns ns ns Mbps SYMBOL CONDITIONS MIN TYP MAX UNITS
Note 1: All units are 100% production tested at TA = +25C. Limits over the operating temperature range are guaranteed by design and not production tested. Note 2: For normal operation, ensure VL < (VCC + 0.3V). Note 3: When VCC is below VL by more than the tri-state threshold, the device turns off its pullup resistors and I/O_ enters tri-state. The device is not in shutdown. Note 4: To ensure maximum ESD protection, place a 1F capacitor between VCC and GND. See the Typical Application Circuit. Note 5: 10% of input to 90% of output. Note 6: 90% of input to 10% of output.
Typical Operating Characteristics
(VCC = +3.3V, VL = +1.8V, RLOAD = 1M, CLOAD = 15pF, TA = +25C, data rate = 8Mbps, unless otherwise noted.)
VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE (DRIVING ONE I/O VL_)
MAX3397E toc01
VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE (DRIVING ONE I/O VCC_)
MAX3397E toc02
VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE (DRIVING ONE I/O VL_)
700 VCC SUPPLY CURRENT (A) 600 500 400 300 200 100
MAX3397E toc03
300 250 VL SUPPLY CURRENT (A) 200 150 100 50 0 1.65 2.20 2.75 3.30 3.85 4.40 4.95
250
800
VL SUPPLY CURRENT (A)
200
150
100
50
0 5.50 1.65 2.20 2.75 3.30 3.85 4.40 4.95 5.50 VCC SUPPLY VOLTAGE (V) VCC SUPPLY VOLTAGE (V)
0 1.2 1.9 2.6 3.3 VL SUPPLY VOLTAGE (V)
4
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Dual Bidirectional Low-Level Translator in DFN MAX3397E
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +1.8V, RLOAD = 1M, CLOAD = 15pF, TA = +25C, data rate = 8Mbps, unless otherwise noted.)
VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE (DRIVING ONE I/O VCC_)
MAX3397E toc04
VL SUPPLY CURRENT vs. TEMPERATURE (DRIVING ONE I/O VL_)
MAX3397E toc05
VL SUPPLY CURRENT vs. TEMPERATURE (DRIVING ONE I/O VCC_)
300 VL SUPPLY CURRENT (A) 250 200 150 100 50 0
MAX3397E toc06
350 300 VCC SUPPLY CURRENT (A) 250 200 150 100 50 0 1.2 1.9 2.6
200 180 160 VL SUPPLY CURRENT (A) 140 120 100 80 60 40 20 0
350
3.3
-40
-15
10
35
60
85
-40
-15
10
35
60
85
VL SUPPLY VOLTAGE (V)
TEMPERATURE (C)
TEMPERATURE (C)
VL SUPPLY CURRENT vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_)
MAX3397E toc07
VCC SUPPLY CURRENT vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_)
MAX3397E toc08
RISE/FALL TIME vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_)
MAX3397E toc09
140 120 VL SUPPLY CURRENT (A) 100 80 60 40 20 0 0 5
1200 1000 VCC SUPPLY CURRENT (A) 800 600 400 200 0
25
20 RISE/FALL TIME (ns) tFVCC 15
10
5
tRVCC
0 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF)
10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF)
PROPAGATION DELAY vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_)
MAX3397E toc10
RISE/FALL TIME vs. CAPACITIVE LOAD (DRIVING ONE I/O VCC_)
tRVL 10 RISE/FALL TIME (ns) 8 6 4 2 0 tFVL
MAX3397E toc11
PROPAGATION DELAY vs. CAPACITIVE LOAD (DRIVING ONE I/O VCC_)
9 8 PROPAGATION DELAY (ns) 7 6 5 4 3 2 1
MAX3397E toc12
12 10 PROPAGATION DELAY (ns) 8 6 4 2 0 0 5
12
10
0 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF)
10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF)
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5
Dual Bidirectional Low-Level Translator in DFN MAX3397E
Typical Operating Characteristics (continued)
(VCC = +3.3V, VL = +1.8V, RLOAD = 1M, CLOAD = 15pF, TA = +25C, data rate = 8Mbps, unless otherwise noted.)
RAIL-TO-RAIL DRIVING (DRIVING ONE I/O VL_)
MAX3397E toc13
EXITING SHUTDOWN MODE
MAX3397E toc14
I/O VL_ I/O VL_ 1V/div
1V/div
2V/div I/O VCC_
I/O VCC_
1V/div EN 1V/div
20ns/div
2s/div
Pin Description
PIN 1 2 3 4 5 6 7 8 NAME I/O VCC2 GND VL I/O VL2 I/O VL1 EN VCC I/O VCC1 Input/Output 2. Referenced to VCC. Ground Logic-Input Voltage. The supply voltage range is +1.2V VL +5.5V. Bypass this supply with a 0.1F capacitor located as close as possible to the input. Input/Output 2. Referenced to VL. Input/Output 1. Referenced to VL. Enable Input. Drive EN high to enable the device. Drive EN low to put the device in shutdown mode. VCC Input Voltage. The supply voltage range is +1.65V VL +5.5V. Bypass this supply with a 0.1F capacitor located as close as possible to the input. A 1F ceramic capacitor is recommended for full ESD protection. Input/Output 1. Referenced to VCC. FUNCTION
Detailed Description
The MAX3397E bidirectional, ESD-protected level translator provides the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. A logic-low signal present on the VL side of the device appears as a logic-low signal on the VCC side of the device, and vice versa. The device uses a transmission-gate-based design (see the Functional Diagram) to allow data translation in either direction (V L V CC ) on any single data line. The MAX3397E accepts VL from +1.2V to +5.5V and VCC
from +1.65V to +5.5V, making the device ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems. The MAX3397E features a shutdown mode that reduces the supply current to less than 1A, thermal short-circuit protection, and 15kV ESD protection on the VCC side for greater protection in applications that route signals externally. The device operates at a guaranteed data rate of 8Mbps over the entire specified operating voltage range. Within specific voltage domains, higher data rates are possible. See the Timing Characteristics table.
6
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Dual Bidirectional Low-Level Translator in DFN MAX3397E
VL VCC VL VCC
VL EN
VCC
VL EN
VCC
MAX3397E DATA I/O VL _ GND I/O VCC_ RLOAD CLOAD CLOAD RLOAD DATA I/O VL _
MAX3397E
I/O VCC_ GND
I/O VL_ (tRISE, tFALL < 10ns) tPD-VL-VCC tPD-VL-VCC
I/O VCC_ (tRISE, tFALL < 10ns) tPD-VCC-VL tPD-VCC-VL
I/O VCC_ tRVCC tFVCC
I/O VL _ tRVL tFVL
Figure 1a. Rail-to-Rail Driving I/O VL
Figure 1b. Rail-to-Rail Driving I/O VCC
Level Translation
For proper operation, ensure that +1.65V VCC +5.5V and +1.2V VL +5.5V. During power-up sequencing, VL (VCC + 0.3V) does not damage the device. The speed-up circuitry limits the maximum data rate for the MAX3397E to 16Mbps. The maximum data rate also depends heavily on the load capacitance (see the Typical Operating Characteristics), output impedance of the driver, and the operational voltage range (see the Timing Characteristics table).
20ns/V are recommended for both the inputs and outputs of the device. Under less noisy conditions, longer signal fall times are acceptable. Note: To guarantee operation of the rise time, accelerators the maximum parasitic capacitance should be less than 200pF on the I/O lines.
Shutdown Mode
Drive EN low to place the MAX3397E in shutdown mode. Connect EN to VL or VCC (logic-high) for normal operation. Activating the shutdown mode disconnects the internal 10k pullup resistors on the I/O VCC and I/O VL lines. This forces the I/O lines to a high-impedance state, and decreases the supply current to less than 1A. The high-impedance I/O lines in shutdown mode allow for use in a multidrop network. The MAX3397E effectively has a diode from each I/O to the corresponding supply rail and GND. Therefore, when in shutdown mode, do not allow the voltage at I/O VL_ to exceed (V L + 0.3V), or the voltage at I/O V CC_ to exceed (VCC + 0.3V).
7
Rise-Time Accelerators
The MAX3397E has an internal rise-time accelerator, allowing operation up to 16Mbps. The rise-time accelerators are present on both sides of the device and act to speed up the rise time of the input and output of the device, regardless of the direction of the data. The triggering mechanism for these accelerators is both level and edge sensitive. To prevent false triggering of the rise-time accelerators, signal fall times of less than
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Dual Bidirectional Low-Level Translator in DFN MAX3397E
VL VCC VL VCC
VL EN
VCC EN
VL
VCC
MAX3397E DATA I/O VL_ GND I/O VCC_ CLOAD RLOAD CLOAD RLOAD DATA I/O VL_
MAX3397E
I/O VCC_ GND
I/O VL_ tPD-VL-VCC tPD-VL-VCC
I/O VCC_ tPD-VCC-VL tPD-VCC-VL
I/O VCC_ tRVCC tFVCC
I/O VL_ tRVL tFVL
Figure 1c. Open-Drain Driving I/O VL
Figure 1d. Open-Drain Driving I/O VCC
Operation with One Supply Disconnected
Certain applications require sections of circuitry to be disconnected to save power. When VL is connected and VCC is disconnected or connected to ground, the device enters shutdown mode. In this mode, I/O VL can still be driven without damage to the device; however, data does not translate from I/O VL to I/O VCC. If VCC falls more than 0.8V (typ) below VL, the device disconnects the pullup resistors at I/O VL and I/O VCC. To achieve the lowest possible supply current from VL when VCC is disconnected, it is recommended that the voltage at the VCC supply input be approximately equal to GND. Note: When VCC is disconnected or connected to ground, I/O VCC must not be driven more than VCC + 0.3V. When VCC is connected and VL is less than 0.7V (typ), the device enters shutdown mode. In this mode, I/O VCC can still be driven without damage to the device; however, data does not translate from I/O VCC to I/O VL. Note: When V L is disconnected or connected to ground, I/O VL must not be driven more than VL + 0.3V.
8
Thermal Short-Circuit Protection
Thermal-overload detection protects the MAX3397E from short-circuit fault conditions. In the event of a short-circuit fault, when the junction temperature (TJ) reaches +150C, a thermal sensor signals the shutdown mode logic to force the device into shutdown mode. When the T J has cooled to +140C, normal operation resumes.
15kV ESD Protection
As with all Maxim devices, ESD-protection structures are incorporated on all pins to protect against electrostatic discharges encountered during handling and assembly. The I/O V CC lines have extra protection against static electricity. Maxim's engineers have developed state-of-the-art structures to protect these pins against ESD of 15kV without damage. The ESD structures withstand high ESD in all states: normal operation, shutdown mode, and powered down. After an ESD event, Maxim's E versions keep working without
_______________________________________________________________________________________
Dual Bidirectional Low-Level Translator in DFN MAX3397E
Functional Diagram
VL EN VCC
PU1
ONE-SHOT BLOCK
ONE-SHOT BLOCK
PU2
TRIGGER
GATE BIAS MAX3397E
I/O VL_
N
I/O VCC_
GND
latchup, whereas competing products can latch and must be powered down to remove latchup. ESD protection can be tested in various ways. The I/O VCC lines of the MAX3397E are characterized for protection to the following limits: 1) 15kV using the Human Body Model 2) 8kV using the Contact Discharge method specified by IEC 61000-4-2 3) 15kV using the Air-Gap Discharge method specified by IEC 61000-4-2
RC 1M CHARGE-CURRENTLIMIT RESISTOR HIGHVOLTAGE DC SOURCE
RD 1500 DISCHARGE RESISTANCE DEVICE UNDER TEST
Cs 100pF
STORAGE CAPACITOR
ESD Test Conditions
ESD performance depends on a variety of conditions. Contact Maxim for a reliability report that documents test setup, test methodology, and test results.
Figure 2a. Human Body ESD Test Model
Human Body Model
Figure 2a shows the Human Body Model, and Figure 2b shows the current waveform it generates when discharged into a low-impedance state. This model consists of a 100pF capacitor charged to the ESD voltage of interest that is then discharged into the test device through a 1.5k resistor.
IP 100% 90% AMPERES 36.8% 10% 0 0 tRL TIME
Ir
PEAK-TO-PEAK RINGING (NOT DRAWN TO SCALE)
IEC 61000-4-2
The IEC 61000-4-2 standard covers ESD testing and performance of finished equipment; it does not specifically refer to integrated circuits. The MAX3397E helps
tDL CURRENT WAVEFORM
Figure 2b. Human Body Current Waveform 9
_______________________________________________________________________________________
Dual Bidirectional Low-Level Translator in DFN
to design equipment that meets Level 4 of IEC 610004-2 without the need for additional ESD-protection components. The major difference between tests done using the Human Body Model and IEC 61000-4-2 is higher peak current in IEC 61000-4-2 because series resistance is lower in the IEC 61000-4-2 model. Hence, the ESD withstand voltage measured to IEC 61000-4-2 is generally lower than that measured using the Human Body Model. Figure 3a shows the IEC 61000-4-2 model, and Figure 3b shows the current waveform for the 8kV, IEC 61000-4-2, Level 4, ESD contact-discharge test. The Air-Gap test involves approaching the device with a charged probe. The contact-discharge method connects the probe to the device before the probe is energized.
MAX3397E
Machine Model
The Machine Model for ESD tests all pins using a 200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by contact that occurs with handling and assembly during manufacturing. Of course, all pins require this protection during manufacturing, not just inputs and outputs. Therefore, after PCB assembly, the Machine Model is less relevant to I/O ports.
Applications Information
Power-Supply Decoupling
To reduce ripple and the chance of transmitting incorrect data, bypass VL and VCC to ground with a 0.1F capacitor (see the Typical Application Circuit). To ensure full 15kV ESD protection, bypass VCC to ground with a 1F capacitor. Place all capacitors as close as possible to the power-supply inputs.
RC 50M to 100M CHARGE-CURRENTLIMIT RESISTOR HIGHVOLTAGE DC SOURCE
RD 330 DISCHARGE RESISTANCE DEVICE UNDER TEST
I2C Level Translation
The MAX3397E level-shifts the data present on the I/O lines between +1.2V and +5.5V, making them ideal for level translation between a low-voltage ASIC and an I2C device. A typical application involves interfacing a low-voltage microprocessor to a 3V or 5V D/A converter, such as the MAX517.
Cs 150pF
STORAGE CAPACITOR
Push-Pull vs. Open-Drain Driving
The MAX3397E can be driven in a push-pull configuration and include internal 10k resistors that pull up I/O VL_ and I/O VCC_ to their respective power supplies, allowing operation of the I/O lines with open-drain devices. See the Timing Characteristics table for maximum data rates when using open-drain drivers.
Figure 3a. IEC 61000-4-2 ESD Test Model
I 100% 90%
Chip Information
PROCESS: BiCMOS
I PEAK
10% t r = 0.7ns to 1ns t 30ns 60ns
Figure 3b. IEC 61000-4-2 ESD Generator Current Waveform 10 ______________________________________________________________________________________
Dual Bidirectional Low-Level Translator in DFN MAX3397E
Typical Application Circuit
+1.8V 0.1F 0.1F 1F +3.3V
VL EN +1.8V SYSTEM CONTROLLER
VCC +3.3V SYSTEM
MAX3397E
I/O VL1 DATA I/O VL2
I/O VCC1 I/O VCC2 DATA
______________________________________________________________________________________
11
Dual Bidirectional Low-Level Translator in DFN MAX3397E
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) 6, 8, 10L UDFN.EPS
A
1 2
D
A
e
b
N
XXXX XXXX XXXX
SOLDER MASK COVERAGE
E
PIN 1 0.10x45
L
PIN 1 INDEX AREA SAMPLE MARKING 7 1 A A
L1
(N/2 -1) x e)
C L
C L
b A A2 A1
L e
EVEN TERMINAL
L e
ODD TERMINAL
PACKAGE OUTLINE, 6, 8, 10L uDFN, 2x2x0.80 mm
-DRAWING NOT TO SCALE-
21-0164
12
______________________________________________________________________________________
Dual Bidirectional Low-Level Translator in DFN
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.)
MAX3397E
COMMON DIMENSIONS SYMBOL A A1 A2 D E L L1 MIN. 0.70 0.15 0.020 1.95 1.95 0.30 NOM. 0.75 0.20 0.025 2.00 2.00 0.40 0.10 REF. MAX. 0.80 0.25 0.035 2.05 2.05 0.50
PACKAGE VARIATIONS PKG. CODE L622-1 L822-1 L1022-1 N 6 8 10 e 0.65 BSC 0.50 BSC 0.40 BSC b 0.300.05 0.250.05 0.200.03 (N/2 -1) x e 1.30 REF. 1.50 REF. 1.60 REF.
PACKAGE OUTLINE, 6, 8, 10L uDFN, 2x2x0.80 mm
-DRAWING NOT TO SCALE-
21-0164
A
2
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 13 (c) 2007 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.
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